More than Moore or CMOS +X – Complementing CMOS to overcome the limits of scaling for future electronic systems

Prof. Dr.-Ing. Gerhard Kahmen

IHP – Leibniz-Institut für innovative Mikroelektronik

While pure CMOS scaling according to Moore’s law is approaching its physical and economical limits orthogonal technologies following the More than Moore approach and combined with scaled CMOS are the key to meet the requirements for future electronic systems.

Future systems such as intelligent autonomous vehicles or communication networks will require a complex combination of powerful computation capabilities, signal processing, sensor technology and artificial intelligence to meet performance, functionality and energy efficiency requirements at the same time.

After a brief overview and limitations of state of the art CMOS technology Si-BiCMOS based technologies complementing highly scaled CMOS to CMOS + X as enabler for future electronic systems are presented and discussed.

Gerhard Kahmen received his Diploma (Dipl-Ing.) in Electrical Engineering (Diplom) at the technical university of Aachen (RWTH) in 1997 and the Dr.-Ing. degree in electrical engineering from Ulm University in 2016. From 1998 to 2000 he worked for Philips Semiconductors in Nimegen / The Netherlands on Power Amplifier Modules for handsets. In 2001 he joined the Test & Measurement division of Rohde & Schwarz in Munich where he developed high dynamic range broadband mixed signal ASICs for test & measurement equipment. From 2008 to 2010 he was responsible for a mixed-signal ASIC R&D team as a director of engineering. From 2011 to 2019 Gerhard Kahmen was responsible for the worldwide mixed signal ASIC R&D activities of Rohde & Schwarz in a Vice President position. Since 2020 he is in the position of the scientific director at the IHP / Frankfurt (Oder) and holds a full professorship for semiconductor technology at Brandenburg Technical University (BTU). His research interests are broadband RF / Mixed-Signal ASICs with high dynamic range and ultra-high speed digital to analog converters for direct digital RF signal generation.